Request a Quote for Part Number 202515-001 With NSN 5962-01-192-0212 by Bae Systems Information And Electronic Systems Integration I!

Mfg Part Number: 202515-001	Alternate P/N: 202515001	NSN : 5962-01-192-0212
NIIN : 011920212	CAGE Code : 81413	Manufacturer: Bae Systems Information And Electronic Systems Integration I
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for your vested interest in sourcing parts from Automatize Procurement. You have reached our NSN RFQ Page where you can submit quote requests on top-requested NSN 5962-01-192-0212 components, such as Microcircuit Memory manufactured by the manufacturer Bae Systems Information And Electronic Systems Integration I. Some of the items we have in stock and ready for purchase include part number 202515-001, and various others, those of which have been thoroughly assessed for quality and reliability. At Automatize Procurement, we make it a priority to provide person-to-person communication at every stage of the fulfillment process, offering rapid lead times, unbeatable cost savings, and exceptional customer service.

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NSN Information for Part Number 202515-001 with NSN 5962-01-192-0212, 5962011920212

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-192-0212 Item Description: Microcircuit Memory	5962	011920212	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
202515-001	2	1	5

Characteristics Data of NSN 5962-01-192-0212, 5962011920212

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 960 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING715 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND BIPOLAR
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN12 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC125 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 125 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT