Request a Quote for Part Number 21049356-103 With NSN 5962-01-358-4070 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor!

Mfg Part Number: 21049356-103	Alternate P/N: 21049356103	NSN : 5962-01-358-4070
NIIN : 013584070	CAGE Code : 81395	Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for your vested interest in sourcing parts from Automatize Procurement. You have reached our NSN RFQ Page where you can submit quote requests on top-requested NSN 5962-01-358-4070 components, such as Microcircuit Memory manufactured by the manufacturer Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Some of the items we have in stock and ready for purchase include part number 21049356-103, and various others, those of which have been thoroughly assessed for quality and reliability. At Automatize Procurement, we make it a priority to provide person-to-person communication at every stage of the fulfillment process, offering rapid lead times, unbeatable cost savings, and exceptional customer service.

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NSN Information for Part Number 21049356-103 with NSN 5962-01-358-4070, 5962013584070

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-358-4070 Item Description: Microcircuit Memory	5962	013584070	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
21049356-103	5	2	3

Characteristics Data of NSN 5962-01-358-4070, 5962013584070

MRC	Criteria	Characteristic
MEMORY	ADAT	BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY
MEMORY	ADAU	BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN38 INPUT
MEMORY	TEST	TEST DATA DOCUMENT96909-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	ADAQ	BODY LENGTH2 096 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-5 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORY	CZEP	CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT